真空熔炼及热压烧结Sb2Se3热电材料的微结构研究
Microstructure of Sb2Se3 Thermoelectric Material Prepared by Vacuum Melting and Hot-Pressing
胡孔刚
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作者单位：九江学院
中文关键字：真空熔炼；热压烧结；Sb2Se3；热电材料
英文关键字：
中文摘要：摘要：采用石英管真空封装高纯度的Sb粉和Se粉，在800℃下熔炼8h，冷却后制成Sb2Se3粉末，在真空下进行热压烧结（470℃, 60MPa）并保温0.5h，成功制备出Sb2Se3块体材料。运用XRD，SEM和EDS方法对材料的物相、形貌和成分进行了表征。XRD分析表明，真空熔炼合成粉末和热压烧结块体材料的XRD图谱峰与Sb2Se3的标准衍射图谱（01-072-1184）相对应。SEM分析说明，Sb2Se3热压块体材料在平行和垂直于热压方向的断面上都分布着大量的层片状结构，平行于热压方向的断面上层片状结构沿某一方向择优生长，而在垂直于热压方向的断面上层片状结构分布更均匀，结晶更充分。EDS能谱分析表明材料中Sb和Se的原子百分比分别为40.68%，59.32%，接近2：3的原子百分比。
英文摘要：High pure Sb and Se sealed in a vacuum quartz tube were smelt at 800℃ for 8 h.Sb2Se3 powders were fabricated by grinding the ingot. Sb2Se3 bulk materials were prepared by hot-press sintering at 470℃ under 60MPa for 0.5h in vacuum. Phase structure and microscopic topography of the samples were characterized by x-ray diffraction (XRD) and scanning electron microscope (SEM). XRD results showed that the diffraction peaks of powders alloyed and bulk materials by hot-press sintering mainly corresponded to the standard Sb2Se3 reference code (01-072-1184 ).The SEM images illustrated that the bulk samples of Sb2Se3 by hot-press sintering had a plenty of sheet layer structures on the cross section perpendicular to and parallel to the hot-press direction . Preferentially oriented sheet layer structures were obtained on the cross section parallel to the hot-press direction. However, sheet layer structures on the cross section perpendicular to the hot-press direction distributed more homogeneously and had fully crystallization than that on the cross section parallel to the hot-press direction. EDS analysis indicated that the atomic percentage of the elements Sb and Se were 40.68% and 59.32% respectively, approaching 2：3 atomic percentage.