硅生长的几种形态与机制
Several Morphology Forms and Growth Mechanisms of Primary Silicon
王松海1, 阎峰云2,3, 周鹏飞2,3
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作者单位：(1. 兰州飞行控制有限责任公司, 甘肃 兰州 730070; 2. 兰州理工大学 甘肃省有色金属新材料省部共建国家重点实验室, 甘肃 兰州 730050; 3. 兰州理工大学 有色金属合金及加工教育部重点实验室, 甘肃 兰州 730050)
中文关键字：初生硅相； 生长迹线； 铝硅合金
英文关键字：primary Si phase; track lines; Al-Si alloy
中文摘要：采用Al-20%Si合金为原料，在室温条件下直接浇注试样。试样经腐蚀后在扫描电镜下观察初晶硅的生长迹线，并对其生长迹线进行了研究，结果表明，初生硅的生长机制为连续生长。
英文摘要：Al-20%Si alloy was selected in the work, and direct casting at room temperature. After the samples was etched, the growth lines of the primary silicon were observed by SEM, and the growth behavior of the primary silicon was studied in detail. The results show that the growth behavior of primary Si is continuous growth.