W80Cu20电触头材料的制备及研究

    Preparation and Research on W80Cu20 Electrical Contact Material

    • 摘要: 为提高电触头材料的性能和使用寿命,采用熔渗法制备出分别掺杂B、Nb、CeO2和Y2O3的W80Cu20触头材料,通过对其显微组织和性能的表征和分析,确定了W80Cu20合金中最佳的元素掺杂种类及掺杂量。结果表明:在W80Cu20合金中掺杂B时,其最佳掺杂量为0.1wt%,合金的相对密度高达99.1%,硬度和电导率分别为234 HB和50.93×103 S/m。W80Cu20合金中Nb的最佳掺杂量为1 wt%,合金的相对密度为98.0%,硬度和电导率分别为235 HB和33.86×103 S/m。当W80Cu20中掺杂稀土氧化物CeO2或Y2O3时,CeO2的最佳掺杂量为0.3wt%,合金的相对密度为97.6%,硬度和导电率分别为234 HB和42.76×103 S/m;Y2O3的最佳掺杂量为0.4wt%,合金的相对密度为98.9%,硬度和电导率分别为232 HB和39.80×103 S/m。经综合分析,W80Cu20合金中最优掺杂组元为B。

       

      Abstract: To improve the performance and service life of electrical contact materials, W80Cu20 contact materials mixed with B, Nb, CeO2 and Y2O3 were prepared by melting seepage method, respectively. Through the characterization and analysis of its microstructure and properties, the best doping type and amount of elements in W80Cu20 alloy were determined. The results show that when B is doped in W80Cu20 alloy, the optimal doping amount is 0.1wt%, the relative density of the alloy is as high as 99.1%, and the hardness and conductivity can reach 234 HB and 50.931×103 S/m, respectively. The optimum Nb content in W80Cu20 alloy is 1 wt%, the relative density is 98.0%, the hardness and conductivity are 235 HB and 33.86×103 S/m, respectively. When CeO2 or Y2O3 is doped into W80Cu20, the optimum doping amount of CeO2 is 0.3wt%, the relative density of the alloy is 97.6%, the hardness and conductivity are 234 HB and 42.76×103 S/m, respectively. The optimum doping amount of Y2O3 is 0.4wt%, the relative density of the alloy is 98.9%, the hardness and conductivity are 232 HB and 39.8×103 S/m, respectively. By comprehensive analysis, the optimal doping component in W80Cu20 alloy is B.

       

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