Study on Characterization of Interface Structure and Element Diffusion of SiC_f/TC17/GH4169 Composites

SiC_f/TC17/GH4169 composites were prepared by using a multi-group two-step construction forming method and hot isostatic pressing. The interface structure of the composites was characterized and the element distribution was investigated. The results show that SiC fibers remain intact and show circular shape in SiC_f/TC17/GH4169 composites. A reaction layer of TiC is formed between SiC fibers and the TC17 alloy. Multiple layers are formed as an effect of element diffusion between TC17 alloy and GH4169 alloy.Ni, Fe and Cr in GH4169 alloy diffuse into TC17, then multiple regions of TiNi₃, FeCr, TiNi, and Ti₂Ni show different morphologies.Cellular FeCr are together with TiNi₃, while the TiNi layer and the Ti₂Ni layer are individual. The total thickness of multiple reaction layers between TC17 alloy and GH4169 alloy is 25 μm.After adding TC17 alloy between SiC fibers and GH4169 alloy, the interface compatibility is improved, and severe interface reaction of SiC fibers and GH4169 alloy is prevented.